IP-L (780)

IP-L (780) is the liquid photoresist formulation with the highest resolution achieved so far in combination with Nanoscribe’s laser lithography systems (see Figures 1 and 2).
 

Figure 1: Grating of parallel lines, with a center-to-center rod distance of 300 nm. The line widths are smaller than 100 nm. Material: IP-L.
 

Figure 2: Woodpile photonic crystals consisting of parallel rods 'stacked' upon another. The centerto-center rod distance is varied from 1.5 μm to 0.4 μm in steps of 100 nm. The 3D structures remain open down to 0.6 μm rod distance. Material: IP-L.

 

IP-G (780)

IP-G is the sol-gel formulation of the acrylic based negative-tone photoresist. The high viscosity makes this resist ideal for complex writing tasks with arbitrary writing sequences and minimum feature sizes on the micro- and sub-micrometer scale (see image of miniaturized Eiffel Tower).

IP-Dip

Specially designed for Nanoscribe's novel Dip-in Laser Lithography (DiLL) technology, IP-Dip serves as immersion and photosensitive material at the same time by dipping the microscope objective into this liquid photoresist. Due to its refractive index matched to the focusing optics, IP-Dip guarantees ideal focusing and hence highest resolution for DiLL (see Figure 3).

Figure 3: SEM images of pentamode mechanical metamaterials fabricated by using DiLL combined with IP-Dip. By courtesy of Prof. Martin Wegener's group, Karlsruhe Institute of Technology (KIT).