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IP Photoresists

Nanoscribe's family of IP-photoresists is specifically designed for the demands of true 3D Direct Laser Writing by two-photon polymerization: Extraordinary resolution in three dimensions at high mechanical stability. Both formulations available are acrylic based negative tone photoresists.

Basic Features:

• Feature sizes smaller than 100 nm
• Low proximity effect
• Low stress
• Little shrinkage
• Good adhesion on glass substrates
• Easy handling:
  • drop-casting of the photoresist
  • no pre-bake (IP-L)
  • no post exposure bake (IP-L, IP-G)

The combination of these properties not only enables you to push resolution to its limits but also to work reproducibly even though film thickness and ambient humidity may differ. Almost no efforts with respect to optimizing the photoresist handling (ramping of temperatures, controlling of the ambient conditions) that become critical if it comes to high resolution demands, have to be put into the development process.

IP-G

IP-G is the sol-gel formulation of the acrylic photoresist. The high viscosity makes this resist ideal for complex writing tasks with arbitrary writing sequences and minimum feature sizes on the micro- and sub-micrometer scale (see upper picture of miniaturized Eiffel Tower).

IP-L

IP-L is the liquid photoresist formulation with the highest resolution achieved so far in combination with Nanoscribe’s laser lithography systems (see Figures 1 and 2).
 

Figure 1: Grating of parallel lines, with a center-to-center rod distance of 300 nm. The line widths are smaller than 90 nm. Material: IP-L.
 

Figure 2: Woodpile structures consisting of parallel rods 'stacked' upon another. The centerto-center rod distance is varied from 1.5 μm to 0.4 μm in steps of 100 nm. Material: IP-L.